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| FLM1314-18F X,Ku-Band Internally Matched FET FEATURES *E Output Power: P1dB=42.5dBm(Typ.) High *E Gain: G1dB=6.0dB(Typ.) High *E PAE: add=27%(Typ.) High *E Broad Band: 13.75~14.5GHz *E Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM1314-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VD S V GS PT Tstg Tch Rating 15 -5 75 -65 to +150 175 Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25o C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VD S IGF IGR Condition RG=25 ohm RG=25 ohm Limit *... 10 *... 44.6 * -9.6 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise Symbol IDSS gm Vp VGSO P1dB G1dB Idsr Nadd G IM3 Rth Tch Condition V DS=5V , V GS=0V V DS=5V , ID S=4.65A V DS=5V , ID S=390mA IGS=-390uA V DS =10V IDSDC=4.0A f= 13.75 ~ 14.5 GHz Zs=ZL=50 ohm f=14.5 GHz f=10MHz*C-tone Test 2 Pout=36.0dBm (S.C.L.) Channel to Case 10V x Idsr X Rth Min. -0.5 -5.0 42.0 5.0 -25 Limit Typ. 9.3 6600 -1.5 42.5 6.0 5.0 27 -30 1.8 Max. 14 -3.0 6.0 1.2 2.0 100 Unit A mS V V dBm dB A % dB dBc o C/W o C G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level CASE STYLE : IB ESD Class III 2000V *@ ~ Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k) Edition 1.1 May 2005 1 FLM1314-18F X,Ku-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER , POWER ADDED EFFICIENCY v.s. INPUT POWER Vds=10V IdsDC=4.0A Freq=14.125GHz 80 Total Power Dissipation [W] 44 43 Output Power (dBm) 42 41 40 39 38 37 36 35 0 50 100 150 200 PAE 100 90 Power Added Efficiency (%) 38 60 Pout 80 70 60 50 40 30 20 10 0 40 20 0 Case Temperature [ o C] 34 28 30 32 34 36 38 40 Input Power (dBm) OUTPUT POWER vs. FREQUENCY Vds=10V, IdsDC=4.0A 44 42 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 30 31 32 33 IMD vs OUTPUT POWER Vds=10V, IdsDC=4.0A f1=14.50GHz, f2=14.51GHz 40 P1dB 27dBm Intermodulation Distortion [dBc] Output Power [dBm] IM3 38 36 34 32 13.50 13.75 14.00 14.25 14.50 14.75 31dBm 35dBm 38dBm IM5 34 35 36 37 Frequency [GHz] Output Power (S.C.L.) [dBm] 2 FLM1314-18F X,Ku-Band Internally Matched FET * S-PARAMETERS +50j +25j +100j 10 +90 13.75GHz +10j 13.75GHz 0 14.5 -10j -250j 14.125 14.125 14.5 * +250j Scale for |S 21| 180 3 2 14.5 14.125 14.125 -25j -50j -100j S11 S22 0.2 -90 Scale for | S 12| 14.5 13.75GHz 0 13.75GHz S12 S21 VDS=10.0V , IDS=4.0A FREQ.(GHz) 13.5 13.6 13.7 13.8 13.9 14.0 14.1 14.2 14.3 14.4 14.5 14.6 14.7 S11mag 0.462 0.394 0.328 0.255 0.189 0.130 0.099 0.115 0.158 0.209 0.254 0.308 0.360 S11ang -154.1 -163.2 -173.9 172.6 156.0 129.2 85.1 38.8 8.7 -13.0 -30.8 -48.6 -66.5 S21mag 1.909 1.976 2.026 2.059 2.093 2.105 2.111 2.105 2.095 2.090 2.089 2.061 2.028 S21ang 51.8 30.0 7.7 -14.9 -37.5 -59.9 -82.7 -105.5 -128.4 -151.2 -174.2 161.8 137.5 S12mag 0.099 0.103 0.107 0.109 0.112 0.114 0.114 0.115 0.115 0.115 0.114 0.112 0.110 S12ang 41.8 21.9 1.5 -18.8 -39.3 -59.9 -80.4 -100.7 -121.2 -142.0 -162.8 176.1 154.2 S22mag 0.402 0.420 0.434 0.443 0.452 0.455 0.449 0.439 0.418 0.392 0.362 0.320 0.274 S22ang 115.1 101.9 89.3 77.7 67.7 58.0 50.5 44.0 38.0 34.0 29.6 29.6 31.7 3 FLM1314-18F X,Ku-Band Internally Matched FET * Package Out Line Case Style : IB Unit : mm PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM1314-18F X,Ku-Band Internally Matched FET For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Eudyna Devices Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: *E not put these products into the mouth. Do *E not alter the form of this product into a gas, powder, or liquid Do through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. *E Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 5 |
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